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Improved Focused Ion Beam Target Preparation of (S)TEM Specimen—A Method for Obtaining Ultrathin Lamellae

Published online by Cambridge University Press:  21 March 2012

Lorenz Lechner ,
Johannes Biskupek  and
Ute Kaiser
Lorenz Lechner*
Affiliation:
Center for Electron Microscopy, Materials Science Group, Ulm University, Ulm, Germany
Johannes Biskupek
Affiliation:
Center for Electron Microscopy, Materials Science Group, Ulm University, Ulm, Germany
Ute Kaiser
Affiliation:
Center for Electron Microscopy, Materials Science Group, Ulm University, Ulm, Germany
*
Corresponding author. E-mail: [email protected]
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Abstract

Specimen quality is vital to (scanning) transmission electron microscopy (TEM) investigations. In particular, thin specimens are required to obtain excellent high-resolution TEM images. Conventional focused ion beam (FIB) preparation methods cannot be employed to reliably create high quality specimens much thinner than 20 nm. We have developed a method for in situ target preparation of ultrathin TEM lamellae by FIB milling. With this method we are able to routinely obtain large area lamellae with coplanar faces, thinner than 10 nm. The resulting specimens are suitable for low kV TEM as well as scanning TEM. We have demonstrated atomic resolution by Cs-corrected high-resolution TEM at 20 kV on a FIB milled Si specimen only 4 nm thick; its amorphous layer measuring less than 1 nm in total.

Keywords

FIBtarget preparationlow voltageTEMSTEMsample preparation
Type
Techniques and Software Development
Information
Microscopy and Microanalysis , Volume 18 , Issue 2 , April 2012 , pp. 379 - 384
Copyright
Copyright © Microscopy Society of America 2012

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References

Giannuzzi, L., Prenitzer, B. & Kempshall, B. (2005). Ion-solid interactions. In Introduction to Focused Ion Beams: Instrumentation, Theory, Techniques and Practice, Giannuzzi, L. & Stevie, F. (Eds.), p. 358. New York: Springer.CrossRefGoogle Scholar
Kaiser, U., Biskupek, J., Meyer, J., Leschner, J., Lechner, L., Rose, H., Stöger-Pollach, M., Khlobystov, A., Hartel, P., Müller, H., Eyhusen, S. & Benner, G. (2011). Transmission electron microscopy at 20 kV for imaging and spectroscopy. Ultramicroscopy 111, 1239–1246.Google Scholar
Kang, H.-J., Kim, J., Oh, J., Back, T. & Kim, H. (2010). Ultra-thin TEM sample preparation with advanced backside FIB milling method. Microsc Microanal 16, 170–171.Google Scholar
Langford, R. & Clinton, C. (2004). In situ lift-out using a FIB-SEM system. Micron 35, 607–611.CrossRefGoogle ScholarPubMed
Langford, R., Petford-Long, A. & Gnauck, P. (2002). Focused ion beam based sample preparation techniques. Microsc Microanal 8, 46–47.CrossRefGoogle Scholar
Leer, B. & Giannuzzi, L.A. (2008). Advances in TEM sample preparation using a focused ion beam. Microsc Microanal 14, 380–381.Google Scholar
Mayer, J., Giannuzzi, L.A., Kamino, T. & Michael, J. (2007). TEM sample preparation and FIB-induced damage. MRS Bull 32, 400–407.Google Scholar
McCaffrey, J.P. & Barna, A. (1997). Preparation of cross-sectional TEM samples for low-angle ion milling. Microsc Res Techniq 36, 362–367.Google Scholar
Rose, H. (2008). History of direct aberration correction. In Advances in Imaging and Electron Physics, vol. 153, pp. 3–39. New York: Elsevier.Google Scholar
Salzer, R., Graff, A., Simon, M. & Altmann, F. (2009). Standard free thickness determination of thin TEM samples via backscatter electron image correlation. Microsc Microanal 15, 340–341.Google Scholar
Walck, S. (1996). A simplified method for modifying TEM copper grids for use with the small angle cleavage technique. Microsc Today 4(4), 12.CrossRefGoogle Scholar
Wunderer, T., Lipski, F., Hertkorn, J., Schwaiger, S. & Scholz, F. (2009). Fabrication of 3D InGaN/GaN structures providing semipolar GaN planes for efficient green light emission. Phys Status Sol C 6, S490–S493.Google Scholar