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Imaging of Electric Fields at the GaN/Ni Interface Using Electron Beam Induced Current in a Scanning Transmission Electron Microscope

Published online by Cambridge University Press:  04 August 2017

Zoey Warecki
Affiliation:
Department of Materials Science and Engineering, University of Maryland, College Park, MD, USA
Vladimir Oleshko
Affiliation:
Materials Science and Engineering Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, USA
Andrew Armstrong
Affiliation:
Sandia National Laboratories, Albuquerque, NM, USA
Kimberly Collins
Affiliation:
Sandia National Laboratories, Livermore, CA, USA
A. Alec Talin
Affiliation:
Sandia National Laboratories, Livermore, CA, USA
John Cumings
Affiliation:
Department of Materials Science and Engineering, University of Maryland, College Park, MD, USA

Abstract

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Type
Abstract
Copyright
© Microscopy Society of America 2017 

References

[1] Pearton, S.J., et al, ECS J. Solid State Sci. Technol 5, Q35 2016.CrossRefGoogle Scholar
[2] Leamy, H.J. J. Appl. Phys 53 1982.Google Scholar
[3] Grim, A.E. ZNaturforsch, A J. Phys. Sci 12, 89 2016.Google Scholar
[4] The authors acknowledge funding from Nanostructures for Electrical Energy Storage (NEES), an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, the National Science Foundation Graduate Research Fellowship Program under Grant No. DGE 1322106, and support from NIST Grant No. 70NANB15H218. Sandia National Laboratories is a multi-mission laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC0494AL85000. ZW thanks Dr. Wen-An Chiou and Dr. Sz-Chian Liou for their advice.Google Scholar