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Imaging Dislocations in Duplex Tial Using Electron Channeling Contrast

Published online by Cambridge University Press:  02 July 2020

B.C. Ng ,
T.R. Bieler  and
M.A. Crimp
B.C. Ng
Affiliation:
Department of Materials Science and Mechanics Michigan State University, East Lansing, MI48824-1226
T.R. Bieler
Affiliation:
Department of Materials Science and Mechanics Michigan State University, East Lansing, MI48824-1226
M.A. Crimp
Affiliation:
Department of Materials Science and Mechanics Michigan State University, East Lansing, MI48824-1226
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Extract

Electron channeling contrast imaging (ECCI), performed using a scanning electron microscope, has been used to observe dislocations in bulk TiAl with a duplex microstructure. The ECCI technique is based on the dependence of the back-scattered electron (BSE) yield (of the incident beam orientation) on the crystal lattice and defect orientation near the specimen surface. This allows nearsurface defects to be imaged in bulk specimens [1, 2]. ECCI was carried out in a Camscan 44FE FEG-SEM operated at 25 kV using a beam divergence of ∽8 mrad and a beam current of ∽ 2nA. Specimens were observed at a working distance of approximately 11 mm. To record the BSE signal, the microscope was fitted with an annular (four quadrant) silicon diode detector array attached to the final lens pole-piece, resulting in a solid angle collection of approximately ∽0.6 π str. Images were recorded as 32 frame averages using ∽1.1 frames/sec.

Type
Metals and Alloys
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 882 - 883
Copyright
Copyright © Microscopy Society of America

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References

1.Morin, P., et al., Phil. Mag. A, 40 (1979) pp. 511.CrossRefGoogle Scholar
2.Czernuska, J.T., et al., Mat. Res. Soc. Symp. Proc. Vol. 209 (1991) pp. 289.CrossRefGoogle Scholar