Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-28T11:03:55.776Z Has data issue: false hasContentIssue false
  • English
  • Français

Image Simulation and Analysis to Predict the Sensitivity Performance of a Multi-Electron Beam Wafer Defect Inspection Tool

Published online by Cambridge University Press:  25 July 2016

Maseeh Mukhtar ,
Kathy Quoi ,
Benjamin D Bunday ,
Matt Malloy  and
Brad Thiel
Maseeh Mukhtar
Affiliation:
Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY12203
Kathy Quoi
Affiliation:
Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY12203
Benjamin D Bunday
Affiliation:
SUNY Polytechnic SEMATECH, Albany, NY, 12203
Matt Malloy
Affiliation:
SUNY Polytechnic SEMATECH, Albany, NY, 12203
Brad Thiel
Affiliation:
Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY12203 SUNY Polytechnic SEMATECH, Albany, NY, 12203

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Information
Microscopy and Microanalysis , Volume 22 , Supplement S3: Proceedings of Microscopy & Microanalysis 2016 , July 2016 , pp. 620 - 621
Copyright
© Microscopy Society of America 2016 

References

[1] Thiel, B., et al., “Assessing the Viability of Multi-Electron Beam Wafer Inspection for sub-20 nm Defects”, Proc. SPIE 9236, Scanning Microscopies 2014, 92360E (2014).Google Scholar
[2] Malloy, M., et al., “Massively Parallel E-Beam Inspection: Enabling next-generation patterned defect inspection for wafer and mask manufacturing”. Metrology, Inspection, and Process Control for Microlithography XXIX. Proc. SPIE 9423, 9423-44 (2015) in press..Google Scholar
[3] Kemen, T., et al., “Further advancing the throughput of a multi-beam SEM.” Metrology, Inspection, and Process Control for Microlithography XXIX. Proc. SPIE 9424, 9423-64 (2015) in press..Google Scholar
[4] Bunday, B., et al., “Simulating Massively Parallel Electron Beam Inspection for sub-20 nm Defects”, Metrology, Inspection, and Process Control for Microlithography XXIX, Proc. SPIE 9423, 9424-19 (2015) in press..Google Scholar
[5] This work was supported by SEMATECH.Google Scholar