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Highresolution X-Ray Spectroscopy at Room Temperature

Published online by Cambridge University Press:  02 July 2020

L. Strüder
Affiliation:
Max-Planck-Institut f”ur extraterrestrische Physik, Giessenbachstr., D-85740, Garching, Germany Postal address: MPI Halbleiterlabor, Paul-Gerhardt-Allee 42, D -81245 M”unchen tel: 00 49 89 83940041, Fax: 00 49 89 83940011
P. Lechner
Affiliation:
KETEK, Am Isarbach 30, D-85764 Oberschleiβheim, Germany Postal address: MPI Halbleiterlabor, Paul-Gerhardt-Allee 42, D -81245 M”unchen tel: 00 49 89 83940041, Fax: 00 49 89 83940011
P. Leutenegger
Affiliation:
KETEK, Am Isarbach 30, D-85764 Oberschleiβheim, Germany Postal address: MPI Halbleiterlabor, Paul-Gerhardt-Allee 42, D -81245 M”unchen tel: 00 49 89 83940041, Fax: 00 49 89 83940011
T. Schülein
Affiliation:
RÖNTEC, Rudower Chaussee 6, 12489Berlin, Germany
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Extract

Silicon drift detectors (SDD) have shown an excellent energy resolution close to room temperature. All signal charges, generated in the fully depleted volume by ionizing radiation are guided to a small electron collecting read-out node. The first amplification is realized with an integrated on-chip JFET. The total read-out capacitance can be kept below 250 fF, independent of the detector area. The fact, that the first amplifier is already integrated in the detector offers many operational advantages: (a) better resolution because of the reduction of read-node capacitance, (b) insensitivity with respect to acoustic noise and electrical pick-up, (c) compact detector packaging and (d) the absence of liquid nitrogen cooling. Fig. 1 shows the detector concept, including the integrated electronics. The X-rays are hitting the SDD from the homogeneous radiation entrance window on the backside of the device.

Type
30 Years of Energy Dispersive Spectrometry in Microanalysis
Copyright
Copyright © Microscopy Society of America

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References

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