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High-accuracy electron tomography of semiconductor devices

Published online by Cambridge University Press:  23 September 2015

Misa Hayashida ,
Lina Gunawan ,
Marek Malac ,
Chris Pawlowicz  and
Martin Couillard
Misa Hayashida
Affiliation:
National Institute for Nanotechnology, Edmonton, Alberta, Canada.
Lina Gunawan
Affiliation:
Techlnsights, Kanata, Ontario, Canada
Marek Malac
Affiliation:
National Institute for Nanotechnology, Edmonton, Alberta, Canada. Department of Physics, University of Alberta, Edmonton, Alberta, Canada.
Chris Pawlowicz
Affiliation:
Techlnsights, Kanata, Ontario, Canada
Martin Couillard
Affiliation:
National Research Council, Ottawa, Ontario, Canada.

Abstract

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Type
Abstract
Information
Microscopy and Microanalysis , Volume 21 , Supplement S3: Proceedings of Microscopy & Microanalysis 2015 , August 2015 , pp. 1609 - 1610
Copyright
Copyright © Microscopy Society of America 2015 

References

[1] Hayashida, M, Malac, M, Bergen, M & Li, P, Ultramicroscopy 144, 50–57.CrossRefGoogle Scholar
[2] Huai-Ruo Zhang, Ray F & Egerton, Marek Malac, Micron 43 (2012)8–15.CrossRefGoogle Scholar
[3] Support of Alberta Innovates Technology Futures, visiting researcher grant is gratefully acknowledged..Google Scholar
[4] http://www.samsung.com/global/business/semiconductor/product/vnand/overview.Google Scholar
[5] This work was done when the first author worked at her earlier affiliation, AIST..Google Scholar