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High Spatial Resolution Analytical Investigation of InGaAs/GaAs Quantum Dots

Published online by Cambridge University Press:  02 July 2020

M. Catalano ,
P. Crozier ,
A. Taurino ,
A. Passaseo  and
R. Cingolani
M. Catalano
Affiliation:
IME-CNR, Via Arnesano, 73100, Lecce, ITALY
P. Crozier
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ85287-1704
A. Taurino
Affiliation:
IME-CNR, Via Arnesano, 73100, Lecce, ITALY
A. Passaseo
Affiliation:
Unità INFM, Università di Lecce, Via Arnesano, 73100, Lecce, ITALY
R. Cingolani
Affiliation:
Unità INFM, Università di Lecce, Via Arnesano, 73100, Lecce, ITALY
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Extract

The improvement of growth techniques in the characterization of semiconductor nanostructures, has recently resulted in the realization of quasi-zero dimensional semi-conducting devices (quantum dots) of excellent performances and of reproducible quality (1,2). The design and fabrication of these devices strongly depends on the ability to control parameters that influence the quantum confinement namely the shape, dimension and size distribution of the dots. High spatial resolution structural and analytical techniques are crucial to obtain nanoscale information about the shape of the dots, the structural and chemical abruptness of the interfaces, and the composition of the dots (3).

In this paper we show the results of a structural and chemical characterization of In0.5Ga0.5As/GaAs quantum dots grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) on a (100) GaAs substrate. The growth was performed in a horizontal LP-MOCVD system (AIXTRON 200 AIX).

Type
The Theory and Practice of Scanning Transmission Electron Microscopy
Information
Microscopy and Microanalysis , Volume 6 , Issue S2: Proceedings: Microscopy & Microanalysis 2000, Microscopy Society of America 58th Annual Meeting, Microbeam Analysis Society 34th Annual Meeting, Microscopical Society of Canada/Societe de Microscopie de Canada 27th Annual Meeting, Philadelphia, Pennsylvania August 13-17, 2000 , August 2000 , pp. 122 - 123
Copyright
Copyright © Microscopy Society of America

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References

(1)Shäfer, F. et al. Applied Phys. Lett. 74 20(1999) 1915–2917Google Scholar
(2)Nötzel, R. et al. Nature 392/5 (1998) 56–59CrossRefGoogle Scholar
(3)Siverns, P. D. et al. Phys. Rev. B 58 16 (1998) R10127-R10130CrossRefGoogle Scholar