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High Energy BSE/SE/STEM Imaging of 8 um Thick Semiconductor Interconnects

Published online by Cambridge University Press:  27 August 2014

L.M. Gignac ,
C. Beslin ,
J. Gonsalves ,
F. Stellari  and
C.-C. Lin
L.M. Gignac
Affiliation:
IBM T. J. Watson Research Center, 1101 Kitchawan Rd., Yorktown Heights, NY 10598
C. Beslin
Affiliation:
IBM T. J. Watson Research Center, 1101 Kitchawan Rd., Yorktown Heights, NY 10598
J. Gonsalves
Affiliation:
IBM T. J. Watson Research Center, 1101 Kitchawan Rd., Yorktown Heights, NY 10598
F. Stellari
Affiliation:
IBM T. J. Watson Research Center, 1101 Kitchawan Rd., Yorktown Heights, NY 10598
C.-C. Lin
Affiliation:
IBM T. J. Watson Research Center, 1101 Kitchawan Rd., Yorktown Heights, NY 10598

Abstract

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Type
Abstract
Information
Microscopy and Microanalysis , Volume 20 , Supplement S3: Proceedings of Microscopy & Microanalysis 2014 , August 2014 , pp. 8 - 9
Copyright
Copyright © Microscopy Society of America 2014 

References

References:

[1] Zhu, Y., Inada, H., Nakamura, K., Wall, J. Nature Materials, 8, 808 (2009).Google Scholar
[2] Gignac, L.M., Kawasaki, M., Boettcher, S.H., Wells, O.C. J. Appl. Phys., 97, 114506 (2005).Google Scholar