Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-28T09:37:00.784Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth Mechanism of (111)-Textured 3C-SiC Films on Si(100) Substrates

Published online by Cambridge University Press:  21 July 2003

V. Radmilovic ,
Di Gao ,
R. Maboudian  and
U. Dahmen
V. Radmilovic
Affiliation:
National Center for Electron Microscopy, Lawrence Berkeley National Laborator
Di Gao
Affiliation:
Department of Chemical Engineering, University of California, Berkeley, CA 9472
R. Maboudian
Affiliation:
Department of Chemical Engineering, University of California, Berkeley, CA 9472
U. Dahmen
Affiliation:
National Center for Electron Microscopy, Lawrence Berkeley National Laborator

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Information
Microscopy and Microanalysis , Volume 9 , Issue S02 , August 2003 , pp. 664 - 665
Copyright
Copyright © Microscopy Society of America 2003