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Growth and Texture of Polycrystalline SIC on Graphite During Forced flow Thermal Gradient Chemical Vapor Infiltration (FCVI)

Published online by Cambridge University Press:  02 July 2020

K.A. Appiah ,
Z.L. Wang  and
W.J. Lackey
K.A. Appiah
Affiliation:
School of Materials Science and Engineering
Z.L. Wang
Affiliation:
School of Materials Science and Engineering
W.J. Lackey
Affiliation:
School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA30332-0245
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Extract

Silicon carbide is a versatile material possessing properties such as a wide energy bandgap, high thermal conductivity, high elastic modulus and high-temperature creep resistance, which enable it to be used in a variety of electronic, optical and structural applications. Chemical vapor infiltration/deposition (CVI/CVD) coupled with the application of a temperature gradient and forced flow of reagents is particularly suited to the production of SiC structural composites due to the benefits of reduced infiltration time and uniform composite density. In this work, the growth and orientation of polycrystalline SiC on graphite during CVI is investigated using TEM and HRTEM.

The composites studied possess a laminated matrix of alternating layers of carbon and SiC which were deposited by alternating the reagent streams from one layer to the next. Specimens for TEM examination were obtained by cutting ∽1 mm thickness slices from the bulk sample with a low speed diamond saw.

Type
Future of Microscopy: Ceramics, Composites, and Cement
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 798 - 799
Copyright
Copyright © Microscopy Society of America

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References

1.Sheldon, B.W., et al., J. Mater. Res., 8 [5] 1086–1092 (1993)CrossRefGoogle Scholar
2. This work was supported by the Packard Foundation and NSF (DMR-9632823).Google Scholar