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Focused Ion Beam Interfaced with a 200 keV Transmission Electron Microscope for In Situ Micropatterning on Semiconductors
Published online by Cambridge University Press: 28 July 2005
Abstract
A focused ion beam (FIB) interface attached to a column of 200 keV transmission electron microscope (TEM) was developed for in situ micropatterning to semiconductors. TEM specimens of Si and GaAs, and those of a thin Ni2Si layer on a Si substrate were micromilled in the TEM during observation. A set of 6 x 6-um squares and alphabet letters were patterned with a 25 keV Ga+-FIB of 0.2-μm beam diameter at room temperature. The effect of FIB irradiation on the structural evolution was observed simultaneously by a TV-rate video camera and sequentially by regular film. FIB micropatterning to semiconductor specimens caused amorphization and Ga injection. The excess Ga in the specimens precipitated as metastable solid γ-phase for Si and as liquid phase for GaAs. Ni2Si/Si specimens lost silicide crystallinity after FIB patterning. Annealing of these bilayer specimens at 673K resulted in the precipitation of Ni-rich silicide.
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- 1998 ASU ELECTRON MICROSCOPY WORKSHOP
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- © 2005 Microscopy Society of America
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