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Focused Ion Beam (FIB): More than Just a Fancy Ion Beam Thinner

Published online by Cambridge University Press:  02 July 2020

Vinayak P. Dravid ,
Steven Kim  and
Luke N. Brewer
Vinayak P. Dravid
Affiliation:
Department of Materials Science & Engineering, Northwestern University, Evanston, IL, 60208
Steven Kim
Affiliation:
Now with Emispec Systems, Inc., Tempe, AZ, 85282
Luke N. Brewer
Affiliation:
Department of Materials Science & Engineering, Northwestern University, Evanston, IL, 60208
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Extract

The potential utility of FIB for routine (and novel) applications has come to forefront recently due to advances in ion optics which now allow formation of focused ion probe of better than ∼10-20 nm containing current density exceeding several A/cm2, with a liquid metal source (typically Gallium). The small ion probe size, coupled with shallow sputtering depth - yet high sputtering yield of ions, has opened several opportunities in machining, lithography and ion-assisted deposition[ 1-3] These developments, including automation, multi-specimen stages, cross-compatible specimen holders for FIB/TEM/SEM, use of in-situ electron beam (so-called dual beam), coupled with innovations such as the “lift-off process[4], have provided an invaluable set of tools for microelectronic defect characterization. However, re-deposition (contamination), ion implantation/damage especially for desirable thinner sections (<∼50 nm) remain major concerns for further applications.

While much of the excitement in TEM community for FIB is due to thin foil specimen preparation (especially in microelectronics),

Type
Applications and Developments of Focused Ion Beams
Information
Microscopy and Microanalysis , Volume 6 , Issue S2: Proceedings: Microscopy & Microanalysis 2000, Microscopy Society of America 58th Annual Meeting, Microbeam Analysis Society 34th Annual Meeting, Microscopical Society of Canada/Societe de Microscopie de Canada 27th Annual Meeting, Philadelphia, Pennsylvania August 13-17, 2000 , August 2000 , pp. 504 - 505
Copyright
Copyright © Microscopy Society of America

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References

References:

1.Stevie, F.A. et al., Surf. Interface Anal., 23, (1995) 61.CrossRefGoogle Scholar
2.Ishitani, T. and Yaguchi, T., Micro. Res. and Tech., 35 (1996) 320.3.0.CO;2-Q>CrossRefGoogle Scholar
3.Walker, J.F. et al., in Microscopy of Semiconducting Materials (IOP Publ., Bristol, UK 1995) 473.Google Scholar
4.Giannuzzi, L., et. al., Microscopy Research and Technique 41 (1998) 285.3.0.CO;2-Q>CrossRefGoogle ScholarPubMed
5.Kung, P. et al., Appl. Phys. Lett., 74 (1999) 570.CrossRefGoogle Scholar
6. This research is partially supported by NSF (DMR-9974013) and US DOE (Grant No. DE-FG02- 92ER45475).Google Scholar