Hostname: page-component-788cddb947-kc5xb Total loading time: 0 Render date: 2024-10-15T05:29:16.269Z Has data issue: false hasContentIssue false
  • English
  • Français

Fast identification of dislocations in semiconductor materials by electron channeling contrast imaging using a scanning electron microscope

Published online by Cambridge University Press:  25 July 2016

Luyang Han  and
Yongkai Zhou
Luyang Han
Affiliation:
Carl Zeiss Microscopy GmbH, Carl-Zeiss-Strasse 22, 73447 Oberkochen, Germany
Yongkai Zhou
Affiliation:
Carl Zeiss Microscopy GmbH, 4 Engineering Drive 3, 117576, Singapore

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Information
Microscopy and Microanalysis , Volume 22 , Supplement S3: Proceedings of Microscopy & Microanalysis 2016 , July 2016 , pp. 1606 - 1607
Copyright
© Microscopy Society of America 2016 

References

References:

[1] Fong Kwong, Yam, et al, Optoelectronics - Materials and Techniques ed. P. Predeep (InTech) p. 99.Google Scholar
[2] Naresh-Kumar, G., et al, Physical Review Letters, 108 (2012). p. 135503.CrossRefGoogle Scholar