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Fast identification of dislocations in semiconductor materials by electron channeling contrast imaging using a scanning electron microscope

Published online by Cambridge University Press:  25 July 2016

Luyang Han
Affiliation:
Carl Zeiss Microscopy GmbH, Carl-Zeiss-Strasse 22, 73447 Oberkochen, Germany
Yongkai Zhou
Affiliation:
Carl Zeiss Microscopy GmbH, 4 Engineering Drive 3, 117576, Singapore

Abstract

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Type
Abstract
Copyright
© Microscopy Society of America 2016 

References

References:

[1] Fong Kwong, Yam, et al, Optoelectronics - Materials and Techniques ed. P. Predeep (InTech) p. 99.Google Scholar
[2] Naresh-Kumar, G., et al, Physical Review Letters, 108 (2012). p. 135503.CrossRefGoogle Scholar