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Examining the Effect of Evaporation Field on Boron Measurements in SiGe: Insights into Improving the Relationship Between APT and SIMS Measurements of Boron

Published online by Cambridge University Press:  13 March 2019

Andrew J. Martin  and
Brett Yatzor
Andrew J. Martin*
Affiliation:
Globalfoundries, Inc., 400 Stone Break Rd Ext, Malta, NY 12020, USA
Brett Yatzor
Affiliation:
Globalfoundries, Inc., 400 Stone Break Rd Ext, Malta, NY 12020, USA
*
*Author for correspondence: Andrew J. Martin, E-mail: [email protected]
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Abstract

Understanding and resolving discrepancies between atom probe tomography (APT) and secondary ion mass spectrometry (SIMS) measurements of B dopants in Si-based materials has long been a problem for those in the semiconductor community who wish to measure B within the source/drain SiGe of a device. APT data collection of Si-based materials is typically optimized for Si, which is logical, but perhaps not ideal for field evaporation of B. Increasing the evaporation field well beyond the typically used 28Si2+:28Si+ ratio of approximately 10:1 up to a ratio of ~200:1 is demonstrated to improve B detection while retaining well-matched Si and Ge concentrations with respect to those measured by SIMS. A range of evaporation conditions are examined from a very low field with high laser energy to an extremely high field with extremely low laser energy demonstrating problems at both far ends of the spectrum and a sweet spot when the operating conditions used produce a 28Si2+:28Si+ ratio of approximately 200:1 (in terms of total counts of each ionization state), which is more than an order of magnitude higher than normally used conditions and results in nicely matched B, Si, and Ge APT measurements with those of SIMS.

Keywords

atom probe tomographycorrelative microscopydopantevaporation fieldSiGesemiconductor
Type
Materials Applications
Information
Microscopy and Microanalysis , Volume 25 , Issue 3 , June 2019 , pp. 617 - 624
Copyright
Copyright © Microscopy Society of America 2019 

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