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Electrical and Structural Properties of In and In + C Doped Ge

Published online by Cambridge University Press:  25 July 2016

R. Feng ,
F. Kremer ,
D. J. Sprouster ,
S. Mirzaei ,
S. Decoster ,
C. J. Glover ,
S. A. Medling ,
L. M. C. Pereira ,
S. P. Russo  and
M. C. Ridgway
R. Feng
Affiliation:
Department of Electronic Materials Engineering, The Australian National University, Canberra, Australia.
F. Kremer
Affiliation:
Department of Electronic Materials Engineering, The Australian National University, Canberra, Australia. Centre for Advanced Microscopy, The Australian National University, Canberra, Australia.
D. J. Sprouster
Affiliation:
Nuclear Science and Technology Department, Brookhaven National Laboratory, Upton, USA.
S. Mirzaei
Affiliation:
Department of Electronic Materials Engineering, The Australian National University, Canberra, Australia.
S. Decoster
Affiliation:
KU Leuven, Institut voor Kern-en Stranlingsfysica, Leuven, Belgium.
C. J. Glover
Affiliation:
Australian Synchrotron, Melbourne, Australia.
S. A. Medling
Affiliation:
Department of Electronic Materials Engineering, The Australian National University, Canberra, Australia.
L. M. C. Pereira
Affiliation:
KU Leuven, Institut voor Kern-en Stranlingsfysica, Leuven, Belgium.
S. P. Russo
Affiliation:
Applied Physics, School of Applied Sciences, RMIT University, Melbourne, Australia.
M. C. Ridgway
Affiliation:
Department of Electronic Materials Engineering, The Australian National University, Canberra, Australia.

Abstract

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Information
Microscopy and Microanalysis , Volume 22 , Supplement S3: Proceedings of Microscopy & Microanalysis 2016 , July 2016 , pp. 1444 - 1445
Copyright
© Microscopy Society of America 2016 

References

[1] Yang, Y. J., et. al, Appl. Phys. Lett. 91, 102103 (2007).Google Scholar
[2] Boudinov, H., et. al., J. Appl. Phys. 86, 5909 (1999).Google Scholar
[3] Feng, R., et. al., J. Appl. Phys. Lett. 118, 165701 (2015).Google Scholar
[4] Feng, R., et. al., Appl. Phys. Lett. 107, 212101 (2015).CrossRefGoogle Scholar
[5] The authors would like to acknowledge the support from the ARC, AMMRF, ANFF and NCRIS.Google Scholar