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Elastic Relaxation of Strained Silicon on Insulator (sSOI) Fins: Nanobeam Diffraction (NBD) and Simulations

Published online by Cambridge University Press:  23 September 2015

J. Li ,
Pierre Morin ,
Q. Liu ,
K. Cheng ,
N. Loubet ,
B. Doris  and
J. Gaudiello
J. Li*
Affiliation:
IBM, Albany, NY 12203 USA
Pierre Morin
Affiliation:
STMicroelectronics, Albany, NY 12203 USA
Q. Liu
Affiliation:
STMicroelectronics, Albany, NY 12203 USA
K. Cheng
Affiliation:
IBM, Albany, NY 12203 USA
N. Loubet
Affiliation:
STMicroelectronics, Albany, NY 12203 USA
B. Doris
Affiliation:
IBM, Albany, NY 12203 USA
J. Gaudiello
Affiliation:
IBM, Albany, NY 12203 USA
*
* E-mail: [email protected]

Abstract

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Type
Abstract
Information
Microscopy and Microanalysis , Volume 21 , Supplement S3: Proceedings of Microscopy & Microanalysis 2015 , August 2015 , pp. 1967 - 1968
Copyright
Copyright © Microscopy Society of America 2015 

References

[1] Ghani, T., et al., IEDM (p 1161, 2003.Google Scholar
[2] Khakifirooz, A., et al., VLSI (p 117, (2012).Google Scholar
[3] Cheng, K., et al., IEDM (p 419, (2012).Google Scholar