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Effective Extinction Distances in Zone Axis Silicon
Published online by Cambridge University Press: 02 July 2020
Extract
Many scientific questions encountered in electron microscopy require quantitative deductions from the observations. Comparisons of experimental observations with simulations are however, still relatively rare since measurements of intensity are normally difficult. In this paper we discuss the use of experimental observations of the effective extinction distances for zone axis silicon using a convergent beam STEM mode for comparison with a number of simulations. On the experimental side, the measurements were made with a STEM that provides accurate intensity measurements directly with a digital image recording system. Two theoretical schemes widely used in electron microscopy simulations, multislice simulation and Bloch-wave calculation, were employed for the simulations. In each case, both a TEM case and a STEM case were calculated for comparison.
The multislice simulations were carried out using codes available from Kirkland. For the TEM case with plane waves at normal incidence on the sample surface, the unscattered (0,0) exit beam gives the Bright Field (BF) intensity.
- Type
- Image Simulation and Image Processing Techniques
- Information
- Microscopy and Microanalysis , Volume 6 , Issue S2: Proceedings: Microscopy & Microanalysis 2000, Microscopy Society of America 58th Annual Meeting, Microbeam Analysis Society 34th Annual Meeting, Microscopical Society of Canada/Societe de Microscopie de Canada 27th Annual Meeting, Philadelphia, Pennsylvania August 13-17, 2000 , August 2000 , pp. 1028 - 1029
- Copyright
- Copyright © Microscopy Society of America