Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-28T14:26:22.639Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect Of Capping Layer During Annealing of Low-Dose Lowenergy Simox Materials

Published online by Cambridge University Press:  02 July 2020

B. Johnson ,
P. Anderson ,
Y. Tan ,
S. Seraphin  and
M. Anc
B. Johnson
Affiliation:
Dept. of Materials Science and Engineering, University of Arizona, Tucson, AZ85721
P. Anderson
Affiliation:
Dept. of Materials Science and Engineering, University of Arizona, Tucson, AZ85721
Y. Tan
Affiliation:
Dept. of Materials Science and Engineering, University of Arizona, Tucson, AZ85721
S. Seraphin
Affiliation:
Dept. of Materials Science and Engineering, University of Arizona, Tucson, AZ85721
M. Anc
Affiliation:
Ibis Technology Corporation, Danvers, MA01923
Get access

Extract

Ultra-thin Silicon-On-Insulator (SOI) materials are becoming increasingly attractive for fabrication of ultra-large scale integrated (ULSI) devices due to their performance, speed, and power reduction advantages [1]. In SIMOX (Separation by IMplanted OXygen) materials, extensive damage can be repaired by high-temperature annealing in an argon ambient. A small percentage of oxygen is added to give a sufficient oxygen partial pressure to prevent formation of silicon monoxide lumps and subsequent pits [2]. Capping the sample surface to prevent external thermal oxidation during annealing is important to preserve the thickness of the top silicon layer. This is particularly critical for the ultra-thin SIMOX produced by the low-dose low-energy process. However, the surface capping also affects the formation of the buried oxide (BOX). To study this effect, two sets of samples implanted at the same doses of 1.5, 2.0, 2.5, and 3.0x 1017O+ /cm2 at 65keV were annealed with or without protective cap on the sample surface.

Type
Semiconductors
Information
Microscopy and Microanalysis , Volume 6 , Issue S2: Proceedings: Microscopy & Microanalysis 2000, Microscopy Society of America 58th Annual Meeting, Microbeam Analysis Society 34th Annual Meeting, Microscopical Society of Canada/Societe de Microscopie de Canada 27th Annual Meeting, Philadelphia, Pennsylvania August 13-17, 2000 , August 2000 , pp. 1090 - 1091
Copyright
Copyright © Microscopy Society of America

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

References:

1.Colinge, J-P., MRS Bulletin, 23, 16, 1998CrossRefGoogle Scholar
2.White, A.E. et al., Appl. Phys. Lett., 50, 19, 1987CrossRefGoogle Scholar
3. This research is supported by the University of Arizona Research Foundation and Ibis Technology Corporation.Google Scholar