Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-24T18:05:19.053Z Has data issue: false hasContentIssue false
  • English
  • Français

Direct Observation of Conducting Path with Highly Reduced Graphene Oxide in Au/GO/Al Resistive Switching Memory

Published online by Cambridge University Press:  25 July 2016

Sung Kyu Kim ,
Jeong Yong Lee  and
Hu Young Jeong
Sung Kyu Kim
Affiliation:
Center of Nanomaterials and Chemical Reactions, Institute of Basic Science (IBS), Daejeon 34047, South Korea Department of Materials Science and Engineering, KAIST, Daejeon 34141, South Korea
Jeong Yong Lee
Affiliation:
Center of Nanomaterials and Chemical Reactions, Institute of Basic Science (IBS), Daejeon 34047, South Korea Department of Materials Science and Engineering, KAIST, Daejeon 34141, South Korea
Hu Young Jeong
Affiliation:
UNIST Central Research Facilities (UCRF) and School of Materials Science and Engineering, UNIST, Ulsan 44919, South Korea

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Information
Microscopy and Microanalysis , Volume 22 , Supplement S3: Proceedings of Microscopy & Microanalysis 2016 , July 2016 , pp. 1608 - 1609
Copyright
© Microscopy Society of America 2016 

References

[1] Meijer, G. I. Science 319 (2008) 1625.Google Scholar
[2] Jeong, H. Y., et al., Nano Lett 10 (2010) 4381.CrossRefGoogle Scholar
[3] Kim, S. K., et al., Adv. Funct. Mater 25 (2015) 6710.Google Scholar
[4] Mkhoyan, K. A., et al., Nano Lett 9 (2009) 1058.Google Scholar
[5] This work is supported by NRF-2014R1A1A2058713 and IBS-R004-G3.Google Scholar