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Direct Determination of Medium Range Ordering in Amorphous Hydrogenated Boron Carbide for Low-k Dielectric Applications

Published online by Cambridge University Press:  30 July 2020

Mehrdad Abbasi Gharacheh ,
Soohyun Im ,
Jared Johnson ,
Gabriel Calderon Ortiz ,
Menglin Zhu ,
Nathan Oyler ,
Michelle Paquette ,
Paul Rulis ,
Ridwan Sakidja  and
Jinwoo Hwang
Mehrdad Abbasi Gharacheh
Affiliation:
The Ohio State University, Columbus, Ohio, United States
Soohyun Im
Affiliation:
The Ohio State University, Columbus, Ohio, United States
Jared Johnson
Affiliation:
The Ohio State University, Columbus, Ohio, United States
Gabriel Calderon Ortiz
Affiliation:
The Ohio State University, Columbus, Ohio, United States
Menglin Zhu
Affiliation:
The Ohio State University, Columbus, Ohio, United States
Nathan Oyler
Affiliation:
University of Missouri – Kansas City, Kansas City, Missouri, United States
Michelle Paquette
Affiliation:
University of Missouri – Kansas City, Kansas City, Missouri, United States
Paul Rulis
Affiliation:
University of Missouri – Kansas City, Kansas City, Missouri, United States
Ridwan Sakidja
Affiliation:
Missouri State University, Springfield, Missouri, United States
Jinwoo Hwang
Affiliation:
The Ohio State University, Columbus, Ohio, United States

Abstract

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Type
Four-dimensional Scanning Transmission Electron Microscopy (4D-STEM): New Experiments and Data Analyses for Determining Materials Functionality and Biological Structures
Information
Microscopy and Microanalysis , Volume 26 , Supplement S2 , August 2020 , pp. 248 - 249
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Copyright
Copyright © Microscopy Society of America 2020

References

Baklanov, M. R., Ho, P. S., and Zschech, E., Advanced Interconnects for ULSI Technology. 2012.10.1002/9781119963677CrossRefGoogle Scholar
Shamiryan, D., Abell, T., Iacopi, F., and Maex, K., “Low-k dielectric materials,” no. January, pp. 34–39, 2004.10.1016/S1369-7021(04)00053-7CrossRefGoogle Scholar
Grill, A., Gates, S. M., Ryan, T. E., Nguyen, S. V., and Priyadarshini, D., “Progress in the development and understanding of advanced low k and ultralow k dielectrics for very large-scale integrated interconnects - State of the art,” Appl. Phys. Rev., vol. 1, no. 1, 2014.Google Scholar
J, B.. Nordell et al., “The influence of hydrogen on the chemical, mechanical, optical/electronic, and electrical transport properties of amorphous hydrogenated boron carbide,” J. Appl. Phys., vol. 118, no. 3, 2015.Google Scholar
Emin, D., “Unusual properties of icosahedral boron-rich solids,” J. Solid State Chem., vol. 179, no. 9, pp. 2791–2798, 2006.10.1016/j.jssc.2006.01.014CrossRefGoogle Scholar