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Creation of Stacking Faults at Substrate Steps in Zns Thin Films Epitaxially Grown on GaAs (001)

Published online by Cambridge University Press:  02 July 2020

Marcel Arnold ,
Z.L. Wang ,
W. Tong ,
B.K. Wagner ,
S. Schön  and
C.J. Summers
Marcel Arnold
Affiliation:
School of Material Science and Engineering, Atlanta, GA30332-0245
Z.L. Wang
Affiliation:
School of Material Science and Engineering, Atlanta, GA30332-0245
W. Tong
Affiliation:
Phosphor Technology Center of Excellence Georgia Institute of Technology, Atlanta, GA30332-0245
B.K. Wagner
Affiliation:
Phosphor Technology Center of Excellence Georgia Institute of Technology, Atlanta, GA30332-0245
S. Schön
Affiliation:
Phosphor Technology Center of Excellence Georgia Institute of Technology, Atlanta, GA30332-0245
C.J. Summers
Affiliation:
Phosphor Technology Center of Excellence Georgia Institute of Technology, Atlanta, GA30332-0245
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Extract

Electroluminescence (EL)-based displays are an emerging technology for next generation flat panel displays. ZnS is an important component material for light emitting devices and EL-displays. To make this material useful for high efficiency and low voltage EL applications, the density of dislocations is required to be low. High quality single crystalline ZnS thin films have recently been grown by chemical beam epitaxy [1]. This paper focuses on studying the formation mechanism of stacking faults in the film and its relation with the interface structure between the substrate and the film [2].

Stacking faults are the main defects present in the film (Fig. 1). All four stacking faults (sf) are intrinsic and sf1, growing towards the left-hand side from the interface, is only of short range since after crossing sf2 the defect is terminated by a Shockley partial dislocation and the normal stacking sequence is restored. This is the mechanism that annihilates most of the stacking faults generated from the interface within the first 70 nm thickness range.

Type
Atomic Structure and Mechanisms at Interfaces in Materials
Information
Microscopy and Microanalysis , Volume 3 , Issue S2: Proceedings: Microscopy & Microanalysis '97, Microscopy Society of America 55th Annual Meeting, Microbeam Analysis Society 31st Annual Meeting, Histochemical Society 48th Annual Meeting, Cleveland, Ohio, August 10-14, 1997 , August 1997 , pp. 633 - 634
Copyright
Copyright © Microscopy Society of America 1997

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References

[1] Tong, W., Shen, X., Wagner, B.K., Tran, T.K., Ogle, W., Park, W., Yang, T. and Summers, C.J. Proceedings of SPIE, 2408 (1995) 182; Tong, W., et al., Journal of Crystal Growth, (1996) in press.CrossRefGoogle Scholar

[2] Arnold, M., Wang, Z.L.Tong, W., Wagner, B.K., Schön, S. and Summers, C.J., Phil. Mag. A, (1996) in press.Google Scholar

[3] This work is supported by the Phosphor Technology Center of Excellence (PTCOE) at Georgia Tech under contract # MDA 972-93-1 -0030.Google Scholar