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Counting Tm Dopant Atoms in and Around GaN Dots using Scannning Transmission Electron Microscopy

Published online by Cambridge University Press:  08 April 2017

J Rouvière
Affiliation:
Commissariat a l'Energie Atomique, France
H Okuno
Affiliation:
Commissariat a l'Energie Atomique, France
P Jouneau
Affiliation:
Commissariat a l'Energie Atomique, France
P Bayle-Guillemaud
Affiliation:
Commissariat a l'Energie Atomique, France
B Daudin
Affiliation:
Commissariat a l'Energie Atomique, France

Extract

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Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.

Type
Abstract
Copyright
Copyright © Microscopy Society of America 2011