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Correlative Defect Characterization in Semiconductors via Electron Channeling Contrast Imaging and Scanning Deep Level Transient Spectroscopy

Published online by Cambridge University Press:  01 August 2018

T. J. Grassman ,
K. Galiano ,
J. I. Deitz ,
S. D. Carnevale ,
D. A. Gleason ,
Z. Zhang ,
S. A. Ringel ,
A. R. Arehart  and
J. P. Pelz
T. J. Grassman
Affiliation:
Department of Materials Science and Engineering, The Ohio State University, ColumbusOH, USA Department of Electrical and Computer Engineering, The Ohio State University, ColumbusOH, USA
K. Galiano
Affiliation:
Department of Physics, The Ohio State University, ColumbusOH, USA
J. I. Deitz
Affiliation:
Department of Materials Science and Engineering, The Ohio State University, ColumbusOH, USA
S. D. Carnevale
Affiliation:
Department of Physics, The Ohio State University, ColumbusOH, USA
D. A. Gleason
Affiliation:
Department of Materials Science and Engineering, The Ohio State University, ColumbusOH, USA
Z. Zhang
Affiliation:
Department of Electrical and Computer Engineering, The Ohio State University, ColumbusOH, USA
S. A. Ringel
Affiliation:
Department of Electrical and Computer Engineering, The Ohio State University, ColumbusOH, USA
A. R. Arehart
Affiliation:
Department of Electrical and Computer Engineering, The Ohio State University, ColumbusOH, USA
J. P. Pelz
Affiliation:
Department of Physics, The Ohio State University, ColumbusOH, USA

Abstract

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Abstract
Information
Microscopy and Microanalysis , Volume 24 , Supplement S1: Proceedings of Microscopy & Microanalysis 2018 , August 2018 , pp. 1056 - 1057
Copyright
© Microscopy Society of America 2018 

References

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[8] The authors would like to acknowledge B. M. McSkimming and J. S. Speck from the University of California, Santa Barbara for growth of the sample used in this work.Google Scholar