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Contrast Effect of Strain Fields in ADF-STEM Imaging

Published online by Cambridge University Press:  02 July 2020

Z. Yu ,
D.A. Muller ,
F. Baumann  and
J. Silcox
Z. Yu
Affiliation:
Physics Department, Cornell University, Ithaca, NY, 14853
D.A. Muller
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ, 07974
F. Baumann
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ, 07974
J. Silcox
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14853
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Abstract

STEM is an important tool for the study of material by forming Z-contrast ADF images. Studies of strain fields suggest that strain can cause extra contrast in ADF images. Since strain fields exist in many TEM samples, especially interfaces of two different materials, it is necessary to study the contrast effect of strain fields in more detail. in this paper, we study the contrast effect of strain fields by STEM experiments and multislice simulations.

Sample thickness and the dimensions of ADF detector can both affect strain contrast. We first study the influence of sample thickness. A cross-section TEM sample of an interface of crystal silicon and amorphous silicon was prepared by typical tripod polishing and was studied with the 100 kV Cornell VG 5.0 UHV STEM. The sample was tilted so that the crystal was on the (110) zone axis and ADF images of the interface were recorded.

Type
Quantitative STEM: Imaging and EELS Analysis Honoring the Contributions of John Silcox (Organized by P. Batson, C. Chen and D. Muller)
Information
Microscopy and Microanalysis , Volume 7 , Issue S2: Proceedings: Microscopy & Microanalysis 2001, Microscopy Society of America 59th Annual Meeting, Microbeam Analysis Society 35th Annual Meeting, Long Beach, California August 5-9, 2001 , August 2001 , pp. 186 - 187
Copyright
Copyright © Microscopy Society of America 2001

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References

references

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5 This work was supported by the Cornell Center for Materials Research (CCMR), a Materials Research Science and Engineering Center of the National Science Foundation (DMR-0079992). The assistance of Earl, Kirkland, Mick, Thomas and Andre Mkhoyan, K. are gratefully acknowledged.Google Scholar