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Compositional Characterization of an O-N-O Layer in a Dram Using FE-TEM and EDS Elemental Mapping

Published online by Cambridge University Press:  02 July 2020

M. Kawasaki ,
T. Oikawa ,
K. Ibe ,
K. H. Park ,
M. Shiojiri  and
M. Kersker
M. Kawasaki
Affiliation:
JEOL ltd., Akishima, Tokyo, 196-8558, Japan
T. Oikawa
Affiliation:
JEOL ltd., Akishima, Tokyo, 196-8558, Japan
K. Ibe
Affiliation:
JEOL ltd., Akishima, Tokyo, 196-8558, Japan
K. H. Park
Affiliation:
Texas Instrument Inc., 13570 North Central Expressway, MS3740, Dallas, TX, 75243
M. Shiojiri
Affiliation:
Kyoto Institute of Technology, Matsugasaki, Goshokaido, Sakyo, Kyoto 606, Japan
M. Kersker
Affiliation:
JEOL USA Inc., 11 Dearborn Road, Peabody, MA, 01960
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Extract

An O-N-O layer within a DRAM is designed to be an insulator between a single-crystal silicon substrate and a poly-crystalline silicon gate. The nominal structure of the layer is SiO2-Si3N4-SiO2. A small amount of phosphorus is doped in the poly-crystalline silicon gate to improve the electrical characteristics of the device. Transmission Electron Microscopy (TEM) was first used to view the micro structure in the layer. A bright field image gave clear contrast in the O-N-O layer, however, TEM images do not provide direct information about the elemental distribution. In this study X-ray elemental mapping was thus used to show this distribution.

The specimen was cut from a 16M-DRAM device and thinned using the cross-section ion milling method. The O-N-O layer was examined using a JEM-201 OF FE-(S)TEM equipped with a JEOL UTW-EDS detector. Fig. 1 shows a high resolution TEM image of the O-N-O layer.

Type
Compositional Mapping With High Spatial Resolution
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 146 - 147
Copyright
Copyright © Microscopy Society of America

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References

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