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Combined EELS and Cathodoluminescence analysis in a STEM microscope of GaN / InGaN quantum wells for LED applications

Published online by Cambridge University Press:  23 September 2015

P Longo ,
DJ Stowe ,
RD Twesten  and
A Howkins
P Longo
Affiliation:
Gatan Inc., 5794 W Las Positas Blvd, Pleasanton, CA, 94588, USA
DJ Stowe
Affiliation:
Gatan Inc., 5794 W Las Positas Blvd, Pleasanton, CA, 94588, USA
RD Twesten
Affiliation:
Gatan Inc., 5794 W Las Positas Blvd, Pleasanton, CA, 94588, USA
A Howkins
Affiliation:
ETC, Brunei University, Uxbridge, London, UK

Abstract

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Type
Abstract
Information
Microscopy and Microanalysis , Volume 21 , Supplement S3: Proceedings of Microscopy & Microanalysis 2015 , August 2015 , pp. 1259 - 1260
Copyright
Copyright © Microscopy Society of America 2015 

References

References:

[1] Kim, S. K., Brewster, M., Qian, F., Li, Y., Lieber, C. M. & Gradecak, S., Nanoletters 9, 3940, 2009.Google Scholar
[2] Zagonel, L. F., Mazzucco, S., Tence', M., March, K., Bernard, R, Laslier, B., Jacopin, G., Tchernycheva, M., Rigutti, L., Julien, F. H., Songmuang, R. & Kociak, M., Nanoletters 11, 2011, 568.CrossRefGoogle Scholar
[3] Yang, T.-J., Speck, J. S. & Wu, Y. -R. Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 898611 (March 8, 2014).Google Scholar