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Characterization of Variations in Schottky Barrier Height in Semiconductor Devices using EBIC Technique

Published online by Cambridge University Press:  02 July 2020

D. Drouin ,
J. Beauvais  and
R. Gauvin
D. Drouin
Affiliation:
Département de génie mécanique, Université de Sherbrooke, Sherbrooke, Québec, CANADAJ1K2R1
J. Beauvais
Affiliation:
Département de génie électrique et de génie informatique, Université de Sherbrooke, Sherbrooke, Québec, CANADAJ1K 2R1
R. Gauvin
Affiliation:
Département de génie mécanique, Université de Sherbrooke, Sherbrooke, Québec, CANADAJ1K2R1
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Extract

Recent developments in microelectronic devices have increased the need for new investigative techniques. Much of the development on Electron Beam Induced Current (EBIC) occurred in the early 70's. Since that time, much of the work has been devoted to using this technique to investigate defects in semiconductor devices. Less attention has been focused on electrical measurement of semiconductor properties.

A digital EBIC method to characterize semiconductors has been developed and is presented here. The sample current is measured using a Keithley 670 electrometer controlled through a GPIB interface by a standard computer. The electron beam from the scanning electron microscope (SEM) is synchronized with the current acquisition. All the acquisition is controlled by a Labview virtual instrument (Figure 1).

As an example of the performance of this method, a special sample was analyzed. A novel method of resistless lithography process was developed in our laboratory. This technique is dedicated to overcome limits of conventional resist based electron beam lithography.

Type
Recent Developments in Microscopy for Studying Electronic and Magnetic Materials
Information
Microscopy and Microanalysis , Volume 3 , Issue S2: Proceedings: Microscopy & Microanalysis '97, Microscopy Society of America 55th Annual Meeting, Microbeam Analysis Society 31st Annual Meeting, Histochemical Society 48th Annual Meeting, Cleveland, Ohio, August 10-14, 1997 , August 1997 , pp. 501 - 502
Copyright
Copyright © Microscopy Society of America 1997

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References

1.Drouin, D. et al., (1997), submitted to Applied Physic Letters.Google Scholar
2.Drouin, D.et al., (1996), Proceeding of the Microscopy and Microanalysis 96 SanFrancisco Press, p. 152–153.Google Scholar