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Characterization of the Oxide-Semiconductor Interface in 4H-SiC/SiO2 Structures using TEM and XPS

Published online by Cambridge University Press:  23 September 2015

Joshua Taillon ,
Karen Gaskell ,
Gang Liu ,
Leonard Feldman ,
Sarit Dahr ,
Tsvetanka Zheleva ,
Aivars Lelis  and
Lourdes Salamanca-Riba
Joshua Taillon
Affiliation:
University of Maryland, Materials Science and Engineering, College Park, MD, USA
Karen Gaskell
Affiliation:
University of Maryland, Chemistry and Biochemistry, College Park, MD, USA
Gang Liu
Affiliation:
Rutgers University, Institute for Advanced Materials, New Brunswick, NJ, USA
Leonard Feldman
Affiliation:
Rutgers University, Institute for Advanced Materials, New Brunswick, NJ, USA
Sarit Dahr
Affiliation:
Auburn University, Physics, Auburn, AL, USA
Tsvetanka Zheleva
Affiliation:
US Army Research Laboratory, Sensors and Electron Devices Directorate, Adelphi, MD, USA
Aivars Lelis
Affiliation:
US Army Research Laboratory, Sensors and Electron Devices Directorate, Adelphi, MD, USA
Lourdes Salamanca-Riba
Affiliation:
University of Maryland, Materials Science and Engineering, College Park, MD, USA

Abstract

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Information
Microscopy and Microanalysis , Volume 21 , Supplement S3: Proceedings of Microscopy & Microanalysis 2015 , August 2015 , pp. 1537 - 1538
Copyright
Copyright © Microscopy Society of America 2015 

References

Reference:

[1] Cooper, J, et al, IEEE Trans. Electron Devices 49 (2002), p. 658.Google Scholar
[2] Jamet, P, Dimitrijev, S & Tanner, P, J. Appl. Phys. 90 (2001), p. 5058.Google Scholar
[3] Taillon, JA, et al, J. Appl. Phys. 113 (2013), p. 044517.Google Scholar
[4] Fenner, DB, Biegelsen, DK & Bringans, RD, J. Appl. Phys. 66 (1989), p. 419.CrossRefGoogle Scholar
[5] Liu, G, et al, IEEE Electron Device Lett. 34 (2013), p. 181.Google Scholar
[6] Senzaki, J, et al, IEEE Electron Device Lett. 23 (2002), p. 13.Google Scholar
[7] Dhar, S, et al, J. American Chemical Societty. 131 (2009), p. 16808.Google Scholar
[8] The authors gratefully acknowledge funding from ARL contracts W911NF-11-2-0044 and W911NF-07-2-0046. JAT additionally acknowledges funding through the NSF GRFP, grant DGE 1322106..Google Scholar