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Characterization of Graphene Directly Grown at Ni/SiO2 Interface Using Inductively Coupled Chemical Vapor Deposition (ICP-CVD) at a Low Temperature

Published online by Cambridge University Press:  30 July 2020

Dibyesh Shrestha ,
Grayson Kolar  and
Jun Jiao
Dibyesh Shrestha
Affiliation:
Portland State University, Portland, Oregon, United States
Grayson Kolar
Affiliation:
Portland State University, Portland, Oregon, United States
Jun Jiao
Affiliation:
Portland State University, Portland, Oregon, United States

Abstract

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Type
New Frontiers in Electron Microscopy of Two-dimensional Materials
Information
Microscopy and Microanalysis , Volume 26 , Supplement S2 , August 2020 , pp. 2336 - 2337
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Copyright
Copyright © Microscopy Society of America 2020

References

Losurdo, M. Giangregorio, Capezzuto, P., and Bruno, G., Physical Chemistry Chemical Physics, vol. 13, no. 46, p. 20836, 2011.10.1039/c1cp22347jCrossRefGoogle Scholar
Nguyen, B., Lin, J. and Perng, D., Nguyen, B., Lin, J., & Perng, D., Applied Physics Letters, 104(8), 082105, 2014Google Scholar
The authors would like to thank Intel, Oregon Metal Initiative, and NSF under award No. ECS-1711994 for their support.Google Scholar