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Characterization of Ferroelectric Random Access Memory (FRAM) Storage Capacitors

Published online by Cambridge University Press:  30 July 2020

Sahar Hihath
Affiliation:
Defense Microelectronics Activity (DMEA), McClellan, California, United States
Hannah Harter
Affiliation:
Defense Microelectronics Activity (DMEA), McClellan, California, United States
Jerry Fortier
Affiliation:
Defense Microelectronics Activity (DMEA), McClellan, California, United States
David Flowers
Affiliation:
Defense Microelectronics Activity (DMEA), McClellan, California, United States

Abstract

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Type
Advances in Electron Microscopy to Characterize Materials Embedded in Devices
Copyright
Copyright © Microscopy Society of America 2020

References

Whatmore, R. (2017) Ferroelectric Materials. In: Kasap, S., Capper, P. (eds) Springer Handbook of Electronic and Photonic Materials. Springer Handbooks. Springer, ChamGoogle Scholar
Yeh, C., et al. AIP Advances, 6, 035128, 2016.Google Scholar
Devaney, J. R., et al. Failure Analysis Mechanisms, Techniques, & Photo Atlas. 1983.Google Scholar
Yoo, D. C., et al. Symp. On VLSI Tech. Dig., pp. 100101, 2005.Google Scholar
Yung, L. C., RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics, Langkawi, 2013, pp. 375378.Google Scholar