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Characterization of Chemically Vapor Deposited GaN on Sic on a Simox Substrate

Published online by Cambridge University Press:  02 July 2020

W.L. Zhou  and
P. Pirouz
W.L. Zhou
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH44106-7204
P. Pirouz
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH44106-7204
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Extract

GaN has been intensively studied because of its potential applications for the fabrication of blue- or ultraviolet-light emitting devices. Sapphire (α-Al2O3) is generally used as the substrate for growth of GaN film. However, the large lattice mismatch between GaN and Al2O3is a possible cause of the large defect density in the GaN films. Consequently, alternative substrates are being studied with the aim of growing films of lesser defect densities and improved opto-electronic properties. In this paper, we report a transmission electron microscopy (TEM) study of a GaN film grown on cubic SiC which has been obtained by carbonization of the top silicon layer of a SIMOX substrate, i.e. the system GaN/SiC/Si/SiO2/Si.

Cross-sectional TEM specimens were prepared by the conventional sandwich technique with the foil surface normal to the Si[l10] direction. The composite sample was ground and dimpled to a thickness of ∼ 10μm, and subsequently ion thinned to electron transparency.

Type
Recent Developments in Microscopy for Studying Electronic and Magnetic Materials
Information
Microscopy and Microanalysis , Volume 3 , Issue S2: Proceedings: Microscopy & Microanalysis '97, Microscopy Society of America 55th Annual Meeting, Microbeam Analysis Society 31st Annual Meeting, Histochemical Society 48th Annual Meeting, Cleveland, Ohio, August 10-14, 1997 , August 1997 , pp. 487 - 488
Copyright
Copyright © Microscopy Society of America 1997

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References

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