Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-02T18:53:29.830Z Has data issue: false hasContentIssue false
  • English
  • Français

Bismuth Nanowires for Potential Applications in Nanoscale Electronics Technology

Published online by Cambridge University Press:  02 July 2020

Stephen B. Cronin ,
Yu-Ming Lin ,
Oded Rabin ,
Marcie R. Black ,
Pratibha L. Gai ,
Gene Dresselhaus  and
Mildred Dresselhaus
Stephen B. Cronin
Affiliation:
Department of Physic
Yu-Ming Lin
Affiliation:
Department of Electrical Engineering and Computer Science
Oded Rabin
Affiliation:
Department of Chemistry
Marcie R. Black
Affiliation:
Department of Electrical Engineering and Computer Science
Pratibha L. Gai
Affiliation:
DuPont, Central Research and Development, Experimental Station, Wilmington, DE , 19880–0356. (also at , >University of Delaware, Department of Materials Science -Eng) , Corresponding Author.
Gene Dresselhaus
Affiliation:
Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, MA , 02139.
Mildred Dresselhaus
Affiliation:
Department of Physic Department of Electrical Engineering and Computer Science
Get access

Abstract

Nanowires have potential applications in future generations of nanoscale electronics. Our motivation of studying Bi nanowires is based on the unique properties of bulk Bi. These include very small effective masses, a long mean-free path and the low melting point (271°C). Calculations of the transport properties predict that the Bi nanowires have a very high thermoelectric efficiency. The effects of quantum confinement are pronounced in Bi because of its small effective masses. The resulting change in the band structure of bulk Bi is shown in Fig. 1. The broken curves depict the band structure in which the T-point valence band overlaps with the L-point conduction band by 38mev making bulk Bi a semimetal. Due to quantum effects, the band edges split into subbands shown by solid curves. As the wire diameter decreases, eventually the lowest conduction subband and the highest valence subband no longer overlap and the material becomes an indirect-gap semiconductor (at ∼50nm diameter).

Type
Novel Microscopy Assisted Ceramic Developments in Materials Scienceand Nanotechnology (Organized by P. Gai and J. Lee)
Information
Microscopy and Microanalysis , Volume 7 , Issue S2: Proceedings: Microscopy & Microanalysis 2001, Microscopy Society of America 59th Annual Meeting, Microbeam Analysis Society 35th Annual Meeting, Long Beach, California August 5-9, 2001 , August 2001 , pp. 418 - 419
Copyright
Copyright © Microscopy Society of America 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Cronin, S.B., Lin, Y., Gai, P.L., Rabin, O., Black, M.R., Dresselhaus, G. and Dresselhaus, M.S., Proceedings of Materials Research Society, Boston, (2000).Google Scholar
2.Hartman, R., Phys.Rev., 181 (1969) 1070.CrossRefGoogle Scholar
3.Gallo, C.F., Chandrasekhar, B.S. and Sutter, P.H., J.Appl.Phys., 34 (1963) 144.CrossRefGoogle Scholar
4.Gai, P.L., Adv. Materials, 10 (1998) 1259.3.0.CO;2-5>CrossRefGoogle Scholar