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Atomic Structure of Si-SiO2 Interface

Published online by Cambridge University Press:  02 July 2020

G. Duscher
Affiliation:
Oak Ridge National Laboratory, Solid State Devision, PO Box 2008, Oak Ridge, TN37831-6031
F. Banhart
Affiliation:
MPI für Metallforschung, Heisenbergstraße 1, 70506Stuttgart, Germany
H. Müllejans
Affiliation:
MPI für Metallforschung, Seestraße 92, 70174Stuttgart, Germany
S.J. Pennycook
Affiliation:
Oak Ridge National Laboratory, Solid State Devision, PO Box 2008, Oak Ridge, TN37831-6031
M. Rühle
Affiliation:
MPI für Metallforschung, Seestraße 92, 70174Stuttgart, Germany
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Extract

Investigations of the atomic structure of Si-SiO2 interfaces have mostly been performed with high resolution transmission electron microscopy. However, the interpretation of the phase contrast in the amorphous phase at the interface is not unique. While Ourmazd et al. concluded on a crystalline phase at the Si-SiO2 interface, Akatsu and Ohdomari attributed the same contrast to an interface roughness parallel to the incident electrons.

We investigated the Si-SiO2 interface by studying the ELNES of the O-K edge with the spatial difference technique with a dedicated STEM with l00kV (VG HB501 UX). Also the interface was studied by Z-contrast imaging with a 300 kV dedicated STEM (VG HB603 U). Silicon wafers (110) were first thermally oxidised to produce a SiO2 layer. The thermally grown oxide was used as a substrate for liquid phase epitaxy of silicon, given two {111} Si-SiO2 interfaces in the sample grown by two different techniques (see fig. 1).

Type
Recent Developments in Microscopy for Studying Electronic and Magnetic Materials
Copyright
Copyright © Microscopy Society of America 1997

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References

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7. This research was supported in part by DOE, under contract DE-AC05-96OR22464 with LMER Corp. and grant no.96ER45610 with UIC, by VW Stiftung under contract 1/70082 and by an appointment to ORNL Postdoctoral Research Program administered by ORISE.Google Scholar