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Atomic Resolution Imaging of Black Spot Defects in Ion Irradiated Silicon Carbide

Published online by Cambridge University Press:  23 September 2015

Li He
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, U.S.A.
Hao Jiang
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, U.S.A.
Yizhang Zhai
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, U.S.A.
Cheng Liu
Affiliation:
Department of Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin, U.S.A.
Izabela Szlufarska
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, U.S.A.
Beata Tyburska-Puschel
Affiliation:
Department of Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin, U.S.A.
Kumar Sridharan
Affiliation:
Department of Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin, U.S.A.
Paul Voyles
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, U.S.A.

Abstract

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Type
Abstract
Copyright
Copyright © Microscopy Society of America 2015 

References

[1] Snead, Lance L., et al, Journal of Nuclear Materials 371 (2007). p 329.Google Scholar
[2] He, Li, et al, Microsc. Microanal. 20(Suppl 3) (2014). p 1824.Google Scholar
[3] Jiang, Chao, Morgan, Dane & Szlufarska, Izabela, Physical Review B 86 (2012) 144118.Google Scholar
[4] Yankovich, Andrew B., et al, Nature Communications 5 (2014). p 4155.CrossRefGoogle Scholar
[5] This research is being performed using funding received from the DOE Office of Nuclear Energy's Nuclear Energy University Programs under contract number CFP-12-3357.Google Scholar