Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-02T21:01:31.473Z Has data issue: false hasContentIssue false
  • English
  • Français

Analytical XTEM Study of Ir/InAlAs Interfacial Reaction for InP-based High Electron Mobility Transistors (HEMTs) Gate Technology

Published online by Cambridge University Press:  31 July 2006

L Wang ,
W Zhao  and
I Adesida
L Wang
Affiliation:
University of Illinois at Urbana-Champaign
W Zhao
Affiliation:
University of Illinois at Urbana-Champaign
I Adesida
Affiliation:
University of Illinois at Urbana-Champaign

Extract

Core share and HTML view are not available for this content. However, as you have access to this content, a full PDF is available via the ‘Save PDF’ action button.

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2005

Type
Abstract
Information
Microscopy and Microanalysis , Volume 12 , Issue S02 , August 2006 , pp. 718 - 719
Copyright
© 2006 Microscopy Society of America