Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-28T19:46:36.911Z Has data issue: false hasContentIssue false

All You Need to Know About Electron Backscatter Diffraction: Orientation is Only the Tip of the Iceberg

Published online by Cambridge University Press:  02 July 2020

J. R. Michael*
Affiliation:
Materials Characterization Dept., Sandia National Laboratories, Albuquerque, NM, 87185-1405
Get access

Extract

This tutorial will describe the technique of electron backscattered diffraction (EBSD) in the scanning electron microscope (SEM). To properly exploit EBSD in the SEM it is important to understand how these patterns are formed. This discussion will be followed by a description of the hardware required for the collection of electron backscatter patterns (EBSP). We will then discuss the methods used to extract the appropriate crystallographic information from the patterns for orientation determination and phase identification and how these operations can be automated. Following this, a number of applications of the technique for both orientation studies and phase identification will be discussed.

EBSD in the SEM is a phenomenon that has been known for many years. EBSD in the SEM is a technique that permits the crystallography of sub-micron sized regions to be studied from a bulk specimen. These patterns were first observed over 40 years ago, before the development of the SEM and were recorded using a special chamber and photographic film.

Type
Tutorials
Copyright
Copyright © Microscopy Society of America 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Alam, M. N., et. al., Proc. Roy. Soc., 221(1954)224.Google Scholar
2.Venables, J. A., et.al., Phil. Mag., 27(1973)1193.10.1080/14786437308225827CrossRefGoogle Scholar
3.Adams, B. L., et.al., Met. Trans.A, 24A( 1993)819.10.1007/BF02656503CrossRefGoogle Scholar
4.Goehner, R.P., et.al., J. of Res. of the Nat. Inst, of Stand, and Tech., 101 (1996)301.10.6028/jres.101.031CrossRefGoogle Scholar
5.Baba-Kishi, K. Z., et.al., Scanning 11(1989)305.10.1002/sca.4950110605CrossRefGoogle Scholar
6. This work was supported by the United States Department of Energy under Contract DE-AC04-94AL85000. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy.Google Scholar