Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-28T06:57:22.703Z Has data issue: false hasContentIssue false
  • English
  • Français

Use of Pt Markers in the Study of Solid-State Reactions in the Presence of an Electric Field

Published online by Cambridge University Press:  28 July 2005

Matthew T. Johnson ,
Shelley R. Gilliss  and
C. Barry Carter
Matthew T. Johnson
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. SE, 204 Amundson Hall, Minneapolis, MN 55455
Shelley R. Gilliss
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. SE, 204 Amundson Hall, Minneapolis, MN 55455
C. Barry Carter
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. SE, 204 Amundson Hall, Minneapolis, MN 55455
Get access

Abstract

The use of Pt to mark the initial location of heterophase boundaries in solid-state reactions was extended to investigate the motion of interfaces during a thin-film solid-state reaction between In2O3 and MgO in the presence of an electric field. The Pt markers were prepared by sputtering a thin Pt film onto a single-crystal substrate. The resulting multilayer was then heated prior to thin-film deposition to de-wet the Pt film and thus form an array of small, isolated particles. These particles serve as fine-scale markers for tracking the motion of interfaces. However, there are certain situations in which the markers can move with the interface.

Keywords

Pt markeroxidereactionSEMinterfaceelectric fieldpulsed-laser deposition
Type
Research Article
Information
Microscopy and Microanalysis , Volume 4 , Issue 2 , April 1998 , pp. 158 - 163
Copyright
© 2005 Microscopy Society of America

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)