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Transmission Electron Microscopic Study Of Heteroepitaxial Mechanism Of Cvd-Dlamond Grown On Pt(Lll) Substrate.

Published online by Cambridge University Press:  02 July 2020

Guofu Zhou ,
Yoshizo Takai  and
Ryuichi Shimizu
Guofu Zhou
Affiliation:
Department of Applied Physics, Osaka University, Suita, Osaka, 565-0871, Japan
Yoshizo Takai
Affiliation:
Department of Applied Physics, Osaka University, Suita, Osaka, 565-0871, Japan
Ryuichi Shimizu
Affiliation:
Department of Applied Physics, Osaka University, Suita, Osaka, 565-0871, Japan
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Extract

Owing to its unique and outstanding physical-chemical properties, diamond is considered to be one of the most important potential materials for applications such as in mechanical, optical, thermal, and electronic devices. Among them, the most attractive application of diamond would be a semiconductor for high temperature and high power electronic devices. To realize such novel devices, a high quality of defect-free single-crystal diamond film is required. Recently, continuous diamond films are found to be able to grow on Pt(lll) substrate. Since the diamond film synthesized on Pt shows a high degree of epitaxy, this approach has drawn the attention of reseafchers in this field and some research results have been reported. However, the heteroepitaxial mechanism is still to be elucidated; in particular, why does diamond grow heteroepitaxially on the Pt substrate and how do the atoms align in the interface between diamond and the Pt substrate? In order to solve those problems, it is very necessary to study the diamond growth mechanism on an atomic scale.

Type
Atomic Structure And Microchemistry Of Interfaces
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 170 - 171
Copyright
Copyright © Microscopy Society of America

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References

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5.The specimens for this study were provided by the Electronics Research Laboratory, Kobe Steel Ltd. The aid of Dr. T. Tachibana and Dr. K. Kobashi is gratefully acknowledged.Google Scholar