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Thermal Treatment Induced Dislocation Bundles in Gaas Substrates Studied by Scanning Infrared Polariscopy, Visible-Light Interferometry, Transmission Electron Microscopy, Makyoh and X-Ray Topography

Published online by Cambridge University Press:  02 July 2020

P. Mock
P. Mock*
Affiliation:
Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, now at: Department of Physics (M/C 273), University of Illinois at Chicago, 845 W. Taylor Street , Chicago, IL60607-7059
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Extract

It is well known that heat treatment induced plastic deformation of GaAs substrates is a key factor that reduces the yield of electronic devices in manufacturing processes on an industrial scale. Our recent X-ray topographic survey showed that a quite common, radiatively heated, non In-bonded sample holder design can cause severe plastic deformation in two-inch diameter GaAs (001) substrates when they are heated up to about 650 °C in a molecular beam epitaxy (MBE) growth chamber. Unintentional plastic deformation occurred for all three investigated MBE machines, which were of different make, but we overcame the technical problem by modifications to the sample holder of a user built MBE machine. At present, however, there is no theoretical model available that can satisfactorily describe the experimental observations including the spatial distribution of the majority of the dislocation bundles.

The plastic deformation up to about 98 % is realised by bundles of dislocations which start at the sample edges around the four <100> peripheral areas,

Type
Semiconductors
Information
Microscopy and Microanalysis , Volume 6 , Issue S2: Proceedings: Microscopy & Microanalysis 2000, Microscopy Society of America 58th Annual Meeting, Microbeam Analysis Society 34th Annual Meeting, Microscopical Society of Canada/Societe de Microscopie de Canada 27th Annual Meeting, Philadelphia, Pennsylvania August 13-17, 2000 , August 2000 , pp. 1104 - 1105
Copyright
Copyright © Microscopy Society of America

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References

References:

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