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Semiconductor Dopant Profiling by Off-Axis Electron Holography

Published online by Cambridge University Press:  02 July 2020

Jing Li ,
M.R. McCartney  and
David J. Smith
Jing Li
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, AZ , 85287-1504.
M.R. McCartney
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ , 85287-1704.
David J. Smith
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, AZ , 85287-1504.
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Abstract

Two-dimensional dopant profiling continues to be a topic of great interest and importance to the semiconductor industry. Off-axis electron holography provides access to the phase of the electron wavefront that has traversed a sample, and it thus enables voltage contrast to be visualized. The technique was used by McCartney et al. (1994) to observe the potential distribution across Si/Si p-n junctions [1], and it was later also used by Rau et al. (1999) to map the two-dimensional electrostatic potential in deep-submicron transistor structures [2]. in this paper, we have used electron holography and a known test structure to demonstrate that accurate voltage profiles can be extracted under carefully controlled sample preparation conditions. Carrier information can be obtained using a simulation program. Experimental factors that affect quantitative measurement are also discussed.

The sample studied was a test structure fabricated at IBM for comparison of various profiling methods [3]. Both p-n junctions and p-p+ regions were available for study.

Type
Semiconductors
Information
Microscopy and Microanalysis , Volume 7 , Issue S2: Proceedings: Microscopy & Microanalysis 2001, Microscopy Society of America 59th Annual Meeting, Microbeam Analysis Society 35th Annual Meeting, Long Beach, California August 5-9, 2001 , August 2001 , pp. 572 - 573
Copyright
Copyright © Microscopy Society of America 2001

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References

1.McCartney, M.R. et al., Appl. Phys. Lett. 65 (1994) 2603.CrossRefGoogle Scholar
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