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Real Time Observations of Nanopipe Formation, Dislocation Motion and Nitrogen Desorption in GaN
Published online by Cambridge University Press: 02 July 2020
Extract
GaN and related wide band gap semiconductor alloys have received considerable attention over the past several years because of their utility in short wavelength opto-electronic and high power / high frequency devices. In most cases, GaN alloys are grown heteroepitaxially on (0001) single crystal sapphire. Due to the high lattice mismatch between GaN and sapphire, typical dislocation densities in these films vary from as high as 1010 cm-2 to, at best, 108 cm-2. Hollow core dislocations - also known as nanopipes - are also frequently observed. The presence of high defect densities is widely believed to limit the performance of GaN based electronic devices, especially the lifetime of commercially important blue and green laser diodes.
In this work, we present real time, in-situ TEM observations of the formation mechanism of nanopipes in single crystal GaN.
- Type
- Semiconductors
- Information
- Microscopy and Microanalysis , Volume 6 , Issue S2: Proceedings: Microscopy & Microanalysis 2000, Microscopy Society of America 58th Annual Meeting, Microbeam Analysis Society 34th Annual Meeting, Microscopical Society of Canada/Societe de Microscopie de Canada 27th Annual Meeting, Philadelphia, Pennsylvania August 13-17, 2000 , August 2000 , pp. 1096 - 1097
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- Copyright © Microscopy Society of America