Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-28T09:34:55.723Z Has data issue: false hasContentIssue false
  • English
  • Français

Real Time Observations of Nanopipe Formation, Dislocation Motion and Nitrogen Desorption in GaN

Published online by Cambridge University Press:  02 July 2020

E.A. Stach ,
C.F. Kisielowski ,
W.S. Wong ,
T. Sands  and
N.W. Cheung
E.A. Stach
Affiliation:
National Center for Electron Microscopy, Lawrence Berkeley National Laboratory
C.F. Kisielowski
Affiliation:
National Center for Electron Microscopy, Lawrence Berkeley National Laboratory
W.S. Wong
Affiliation:
Department of Materials Science and Mineral Engineering, University of California at Berkeley
T. Sands
Affiliation:
Department of Materials Science and Mineral Engineering, University of California at Berkeley
N.W. Cheung
Affiliation:
Department of Electrical Engineering and Materials Science, University of California at Berkeley
Get access

Extract

GaN and related wide band gap semiconductor alloys have received considerable attention over the past several years because of their utility in short wavelength opto-electronic and high power / high frequency devices. In most cases, GaN alloys are grown heteroepitaxially on (0001) single crystal sapphire. Due to the high lattice mismatch between GaN and sapphire, typical dislocation densities in these films vary from as high as 1010 cm-2 to, at best, 108 cm-2. Hollow core dislocations - also known as nanopipes - are also frequently observed. The presence of high defect densities is widely believed to limit the performance of GaN based electronic devices, especially the lifetime of commercially important blue and green laser diodes.

In this work, we present real time, in-situ TEM observations of the formation mechanism of nanopipes in single crystal GaN.

Type
Semiconductors
Information
Microscopy and Microanalysis , Volume 6 , Issue S2: Proceedings: Microscopy & Microanalysis 2000, Microscopy Society of America 58th Annual Meeting, Microbeam Analysis Society 34th Annual Meeting, Microscopical Society of Canada/Societe de Microscopie de Canada 27th Annual Meeting, Philadelphia, Pennsylvania August 13-17, 2000 , August 2000 , pp. 1096 - 1097
Copyright
Copyright © Microscopy Society of America

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

References:

1Wong, W.S., Sands, T., and Cheung, N.W.; Appl. Phys. Lett. 72, 599 (1998).CrossRefGoogle Scholar
2Wong, W.S., et al.; Proc. Symp. on LED for Optoelectronic Applications, 98-2, 377 (1998).Google Scholar
3Ambacher, O., et al., J. Vac. Sci. Tech. B 14, 3532, 1996.CrossRefGoogle Scholar