Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-24T16:07:18.926Z Has data issue: false hasContentIssue false

Planar defects in patterned GaAs by aberration corrected STEM

Published online by Cambridge University Press:  23 November 2012

R. dos Reis
Affiliation:
Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA
Z. Liliental-Weber
Affiliation:
Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA
C. Ophus
Affiliation:
National Center for Electron Microscopy, LBNL, Berkeley, CA
J. Jimenez
Affiliation:
Física de la Matéria Condensada, Universidad de Valladolid, Valladolid, Spain
M. Snure
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Hascom AFB, MA
B. Gerard
Affiliation:
Thales-Alcatel III-V Laboratory, Palaiseau Cedex, France
Get access

Abstract

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Type
Research Article
Copyright
Copyright © Microscopy Society of America 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)