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Pattern Recognition in High-Resolution Electron Microscopy of Complex Materials

Published online by Cambridge University Press:  11 October 2006

Tore Niermann ,
Karsten Thiel  and
Michael Seibt
Tore Niermann
Affiliation:
Physikalisches Institut der Universität Göttingen, Friedrich-Hund-Platz 1, D-37077 Göttingen, Germany
Karsten Thiel
Affiliation:
Physikalisches Institut der Universität Göttingen, Friedrich-Hund-Platz 1, D-37077 Göttingen, Germany Sonderforschungsbereich 602, Friedrich-Hund-Platz 1, D-37077 Göttingen, Germany
Michael Seibt
Affiliation:
Physikalisches Institut der Universität Göttingen, Friedrich-Hund-Platz 1, D-37077 Göttingen, Germany Sonderforschungsbereich 602, Friedrich-Hund-Platz 1, D-37077 Göttingen, Germany
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Abstract

Structural features like defects or heterointerfaces in crystals or amorphous phases give rise to different local patterns in high-resolution electron micrographs or object wave functions. Pattern recognition techniques can be used to identify these typical patterns that constitute the image itself, as was already demonstrated for compositional changes in isostructural heterostructures, where the patterns within unit cells of the lattice were analyzed. To extend such analyses to more complex materials, we examined patterns in small circular areas centered on intensity maxima of the image. Nonsupervised clustering, namely, Ward's clustering method, was applied to these patterns. In two examples, a highly defective ZnMnTe layer on GaAs and a tunnel magneto resistance device, we demonstrate how typical patterns are identified by this method and how these results can be used for a further investigation of the microstructural properties of the sample.

Keywords

crystal microstructureimage classificationpattern recognitiontransmission electron microscopyinterface roughness
Type
Research Article
Information
Microscopy and Microanalysis , Volume 12 , Issue 6 , December 2006 , pp. 476 - 482
Copyright
© 2006 Microscopy Society of America

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