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On the Field Evaporation Behavior of Dielectric Materials in Three-Dimensional Atom Probe: A Numeric Simulation

Published online by Cambridge University Press:  01 October 2010

Christian Oberdorfer  and
Guido Schmitz
Christian Oberdorfer*
Affiliation:
Institute of Materials Physics, Westfälische Wilhelms-Universität, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany
Guido Schmitz
Affiliation:
Institute of Materials Physics, Westfälische Wilhelms-Universität, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany
*
Corresponding author. E-mail: [email protected]
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Abstract

As a major improvement in three-dimensional (3D) atom probe, the range of applicable material classes has recently been broadened by the establishment of laser-assisted atom probes (LA-3DAP). Meanwhile, measurements of materials of low conductivity, such as dielectrics, ceramics, and semiconductors, have widely been demonstrated. However, besides different evaporation probabilities, heterogeneous dielectric properties are expected to give rise to additional artifacts in the 3D volume reconstruction on which the method is based. In this article, these conceivable artifacts are discussed based on a numeric simulation of the field evaporation. Sample tips of layer- or precipitate-type geometry are considered. It is demonstrated that dielectric materials tend to behave similarly to metals of reduced critical evaporation field.

Keywords

atom probedielectric materialsfield evaporationnumeric simulationdielectric layersoxide precipitates
Type
Atom Probe Applications
Information
Microscopy and Microanalysis , Volume 17 , Issue 1 , February 2011 , pp. 15 - 25
Copyright
Copyright © Microscopy Society of America 2011

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