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Non Destructive Determination of the Threading Dislocation Density of Smooth Simox Substrates using Atomic Force Microscopy

Published online by Cambridge University Press:  02 July 2020

A. Domenicucci ,
R. Murphy ,
D. Sadanna  and
S. Klepeis
A. Domenicucci
Affiliation:
Semiconductor Research and Development Center, IBM Microelectronics Division, Hopewell Junction, New York12533
R. Murphy
Affiliation:
Semiconductor Research and Development Center, IBM Microelectronics Division, Hopewell Junction, New York12533
D. Sadanna
Affiliation:
Semiconductor Research and Development Center, IBM Microelectronics Division, Hopewell Junction, New York12533
S. Klepeis
Affiliation:
Semiconductor Research and Development Center, IBM Microelectronics Division, Hopewell Junction, New York12533
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Extract

Atomic force microscopy (AFM) has been used extensively in recent years to study the topographic nature of surfaces in the nanometer range. Its high resolution and ability to be automated have made it an indispensable tool in semiconductor fabrication. Traditionally, AFM has been used to monitor the surface roughness of substrates fabricated by separation by implanted oxygen (SIMOX) processes. It was during such monitoring that a novel use of AFM was uncovered.

A SIMOX process requires two basic steps - a high dose oxygen ion implantation (1017 to 1018 cm-3) followed by a high temperature anneal (>1200°C). The result of these processes is to form a buried oxide layer which isolates a top single crystal silicon layer from the underlying substrate. Pairs of threading dislocations can form in the top silicon layer during the high temperature anneal as a result of damage caused during the high dose oxygen implant.

Type
Semiconductors
Information
Microscopy and Microanalysis , Volume 6 , Issue S2: Proceedings: Microscopy & Microanalysis 2000, Microscopy Society of America 58th Annual Meeting, Microbeam Analysis Society 34th Annual Meeting, Microscopical Society of Canada/Societe de Microscopie de Canada 27th Annual Meeting, Philadelphia, Pennsylvania August 13-17, 2000 , August 2000 , pp. 1088 - 1089
Copyright
Copyright © Microscopy Society of America

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References

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