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New Scanning Electron Microscope Sharpness Standard: NIST Reference Material 8091 (Rm 8091)

Published online by Cambridge University Press:  02 July 2020

M. T. Postek ,
A. E. Vladar ,
N.-F. Zhang  and
R. Larrabee
M. T. Postek
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD, 20899-8121
A. E. Vladar
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD, 20899-8121
N.-F. Zhang
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD, 20899-8121
R. Larrabee
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD, 20899-8121
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Abstract

All scanning electron microscopes, whether they are in laboratory or on the production line, slowly lose performance as the instrument is used. This loss of performance is due to a whole array of contributing factors including misalignments, contamination and increases in source diameter. Identifying a loss in “sharpness” easily recognizes this performance decrease. Reference Material 8091 (RM 8091) is intended primarily for use in routinely checking the sharpness performance of scanning electron microscopes (Fig. 1). RM 8091 is designed to be used in conjunction with the SPECTEL SEM Monitor Program, the NIST Kurtosis program,3 or the University of Tennessee SMART program. RM 8091 is supplied as a small, approximately 2 mm x 2 mm diced semiconductor chip. This sample is capable of being mounted directly on to a wafer, wafer piece or specimen stub for insertion into a laboratory scanning electron microscope or wafer inspection scanning electron microscope.

Type
Microscopy in the Real World: Semiconductors and Materials
Information
Microscopy and Microanalysis , Volume 7 , Issue S2: Proceedings: Microscopy & Microanalysis 2001, Microscopy Society of America 59th Annual Meeting, Microbeam Analysis Society 35th Annual Meeting, Long Beach, California August 5-9, 2001 , August 2001 , pp. 494 - 495
Copyright
Copyright © Microscopy Society of America 2001

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References

1.Postek, M. T. and Vladar, A. E., A. E., SCANNING 20 (1998): 1–9.CrossRefGoogle Scholar
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3.Zhang, N. -F. et al., SCANNING 21 (1999):256–262.Google ScholarPubMed
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5.Postek, M. T., M. T. and Vladar, A. E.Proceedings SPIE 2725 (1996): 504–514.CrossRefGoogle Scholar
6. This work was supported in part by International SEMATECH and the NIST Office of Microelectronics Programs.Google Scholar