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A New Methodology for Element Imaging in the Scanning Electron Microscope

Published online by Cambridge University Press:  02 July 2020

Paul Smith ,
John Gannon  and
Frank Eggert
Paul Smith
Affiliation:
R öNtec Usa, Inc., Acton, Ma;
John Gannon
Affiliation:
R öNtec Usa, Inc., Acton, Ma;
Frank Eggert
Affiliation:
R öNTEC GmbH, Berlin, Germany
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Abstract

The analysis of samples with a scanning electron microscope often requires element distribution images. Until recently, element mapping was strongly limited by the count rate that could be processed with conventional EDS systems using Si(Li) or Ge crystal diode detectors. The enhancement of secondary and backscattered SEM images can now be achieved through the addition of rapid color imaging. Using a new methodology for color enhancement, features as small as 1 micrometer can be colored and easily distinguished. The addition of color to SEM images enables easy visualization of element distributions and allows the microstructural features and compositional variations of different materials to be more readily identified. Persons unfamiliar with electron microscopy can more readily interpret color images than black and white or gray scale images. This new technology for imaging elements has great potential to revolutionize electron microscopy.

The detector technology behind this new methodology is the silicon drift diode (SDD).

Type
Frontiers of X-Ray Spectrometry (Eds and Wds) in Microanalysis (Organized by D. Newbury and J. H. Scott)
Information
Microscopy and Microanalysis , Volume 7 , Issue S2: Proceedings: Microscopy & Microanalysis 2001, Microscopy Society of America 59th Annual Meeting, Microbeam Analysis Society 35th Annual Meeting, Long Beach, California August 5-9, 2001 , August 2001 , pp. 1054 - 1055
Copyright
Copyright © Microscopy Society of America 2001

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References

references

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4. Thanks to Ms. Benemann, S. and Dr.Procop, M. of the Federal Institute of Material Research and Testing, Berlin, for some of the images presented.Google Scholar