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Microstructure Characterization of Defects in Cubic Silicon Carbide Using Transmission Electron Microscopy

Published online by Cambridge University Press:  06 August 2013

Bralee Chayasombat ,
Yusuke Kimata ,
Tomoharu Tokunaga ,
Kotaro Kuroda  and
Katsuhiro Sasaki
Bralee Chayasombat
Affiliation:
Graduate School of Engineering, Nagoya University, Furo-cho Nagoya 464-8603, Japan
Yusuke Kimata
Affiliation:
Graduate School of Engineering, Nagoya University, Furo-cho Nagoya 464-8603, Japan
Tomoharu Tokunaga
Affiliation:
Department of Quantum Engineering, Nagoya University, Furo-cho Nagoya 464-8603, Japan
Kotaro Kuroda
Affiliation:
Department of Quantum Engineering, Nagoya University, Furo-cho Nagoya 464-8603, Japan
Katsuhiro Sasaki*
Affiliation:
Department of Quantum Engineering, Nagoya University, Furo-cho Nagoya 464-8603, Japan
*
*Corresponding author. E-mail: [email protected]
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Abstract

Microstructures of 3C–SiC grown by chemical vapor deposition (CVD) technique on undulant silicon substrate and a further developed technique called switch-back epitaxy (SBE) were studied using transmission electron microscopy (TEM). In case of the CVD sample, the density of the stacking faults was found to be significantly decreasing along growth direction. Sites of collision of stacking faults were observed using high-resolution transmission electron microscopy. Some of the stacking faults were observed to have disappeared after colliding into each other. The stacking faults were identified to be on the same type of plane and had the same type of displacement vector not only in CVD and SBE but also in the epitaxial layer on the SBE SiC samples.

Keywords

CVD 3C–SiCSBE 3C–SiCepitaxial layerstacking faultFIBTEM
Type
Research Article
Information
Microscopy and Microanalysis , Volume 19 , Supplement S5: IUMAS , August 2013 , pp. 119 - 122
Copyright
Copyright © Microscopy Society of America 2013 

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References

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