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A Method for Preparation of Site-Specific Multiple Samples of Semiconductor Material for Transmission Electron Microscopy

Published online by Cambridge University Press:  02 July 2020

R. S. Rai
Affiliation:
Motorola APDER Digital DNA Laboratories, Austin, TX, 78721
S. Bagchi
Affiliation:
Motorola APDER Digital DNA Laboratories, Austin, TX, 78721
L. Duncan
Affiliation:
Motorola APDER Digital DNA Laboratories, Austin, TX, 78721
L. Prabhu
Affiliation:
Motorola APDER Digital DNA Laboratories, Austin, TX, 78721
J. Beck
Affiliation:
Motorola APDER Digital DNA Laboratories, Austin, TX, 78721
J. Conner
Affiliation:
Motorola APDER Digital DNA Laboratories, Austin, TX, 78721
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Abstract

In recent years, the availability of focused ion beam (FIB) milling systems has given a much-needed boost for transmission electron microscopy (TEM) as a technique for site-specific analysis. Much progress has been made in the area of site-specific cross-sectional and planar TEM sample preparation techniques. However, a continuing need exists to reduce the sample preparation time, in order to improve TEM cycle time for better support of process development, yield improvement and production in a high-volume industrial environment. Thus, a faster TEM sample preparation technique is always desirable to meet this demand. A new approach to TEM sample preparation is described in this paper.

Following the new approach developed in the present work, one can prepare on a single TEM grid at least two different cross-sectional samples of site-specific device structures or up to four different cross-sectional samples of blanket films. Two different samples, each containing an area of interest near the center, are cleaved or cut to a width of about 1.25 mm; these samples may be from two separate locations of a wafer, or from two different wafers where TEM analyses are required.

Type
Applications and Developments of Focused Ion Beam (FIB) Instruments (Organized by L. Giannuzzi)
Copyright
Copyright © Microscopy Society of America 2001

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References

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[5] The authors would like to acknowledge Joe Mogab, Dave Sieloff, and Chuck Davin for their support.Google Scholar