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Mechanism of Reversible Conductance Transitions in a Crystalline Thin-Film

Published online by Cambridge University Press:  02 July 2020

Karl Sohlberg ,
Hongjun Gao  and
Stephen J. Penny cook
Karl Sohlberg
Affiliation:
Solid State Division, P.O. Box 2008, ORNL, Oak Ridge, TN37831-6031
Hongjun Gao
Affiliation:
also, Beijing Laboratory of Vacuum Physics, Beijing P.R.C.
Stephen J. Penny cook
Affiliation:
Solid State Division, P.O. Box 2008, ORNL, Oak Ridge, TN37831-6031
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Extract

Recently there has been considerable interest in developing nanometer- and sub-nanometer-scale electronic devices. Of particular interest in this regard is whether individual molecules or molecular complexes can be employed as electronic device elements. Aviram et al. have reported switching and rectification in an organic thin film. More recently, Potember et al. have shown a field-induced conductance transition on a 500 nm scale, but did not demonstrate local reversibility of the transition. The reverse transition was induced only by application of a broad laser pulse or heat. We have observed and replicated reversible conductance transitions in a fully-organic crystalline complex, on a scale close to the dimensions of the unit cell.

A crystalline thin-film organic complex of 3-nitrobenzal malononitrile and 1,4-phenylenediamine (NBMN-pDA), exhibits reversible conductance transitions on the sub-nanometer scale when exposed to local electric field pulses from an STM tip.

Type
The Theory and Practice of Scanning Transmission Electron Microscopy
Information
Microscopy and Microanalysis , Volume 6 , Issue S2: Proceedings: Microscopy & Microanalysis 2000, Microscopy Society of America 58th Annual Meeting, Microbeam Analysis Society 34th Annual Meeting, Microscopical Society of Canada/Societe de Microscopie de Canada 27th Annual Meeting, Philadelphia, Pennsylvania August 13-17, 2000 , August 2000 , pp. 146 - 147
Copyright
Copyright © Microscopy Society of America

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References

[1]Aviram, A., Joachim, C., and Pomerantz, M., Chern. Phys. Lett, 146, 490 (1988); A. Aviram. C. Joachim, and M. Pomerantz, Chem. Phys. Lett., 162, 416 (1989).CrossRefGoogle Scholar
[2]Potember, R. S., Poehler, T. O., Cowan, D. O., Carter, F. L., and Brant, P., Molecular Electronic Devices, ed. Carter, F. L. (Marcel Dekker, NY). 73(1983); S. Yamaguchi and R. S. Potember, Mol. Crys. Liq. Crys., 267, 241 (1995).Google Scholar
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[4] This work was supported by ORNL, managed by Lockheed Martin Energy Research Corp. under DOE Contract No. DE-AC05-96OR22464, and by the NSF of P. R. China.Google Scholar